P600K, R-6, 6A, 6A, 400A, R-6 ( 9x9mm ), 800V

P600K, R-6, 6A, 6A, 400A, R-6 ( 9x9mm ), 800V

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Unit price
1-4
0.26$
5-49
0.20$
50-99
0.18$
100-199
0.16$
200+
0.12$
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Quantity in stock: 385

P600K, R-6, 6A, 6A, 400A, R-6 ( 9x9mm ), 800V. Housing: R-6. Forward current (AV): 6A. Average Rectified Current per Diode: 6A. IFSM: 400A. Housing (according to data sheet): R-6 ( 9x9mm ). VRRM: 800V. Assembly/installation: PCB through-hole mounting. Cj: 150pF. Conditioning: Ammo Pack. Conduction voltage (threshold voltage): 1.1V. Dielectric structure: Anode-Cathode. Diode Configuration: independent. Diode type: rectifier diode. Driving current: 6A. Forward Voltage (Max): <1.0V / 5A. Forward voltage Vf (min): 0.9V. Information: -. MRI (max): 500uA. MRI (min): 10uA. MSL: -. Marking on the case: 6A08. Max reverse voltage: 800V. Mounting Type: THT. Number of terminals: 2. Operating temperature: -65...+175°C. Pulse current max.: 300A. Quantity per case: 1. Reverse Leakage Current: 25uA / 800V. Reverse Recovery Time (Max): 1500ns. RoHS: yes. Semiconductor material: silicon. Semiconductor structure: diode. Series: P600. Spec info: IFSM--400Ap (t=8.3ms). Threshold voltage Vf (max): 1.1V. Threshold voltage: 1.1V, 900mV. Trr Diode (Min.): 2500 ns. Original product from manufacturer: Dc Components Co. Quantity in stock updated on 10/31/2025, 08:27

Technical documentation (PDF)
P600K
36 parameters
Housing
R-6
Forward current (AV)
6A
Average Rectified Current per Diode
6A
IFSM
400A
Housing (according to data sheet)
R-6 ( 9x9mm )
VRRM
800V
Assembly/installation
PCB through-hole mounting
Cj
150pF
Conditioning
Ammo Pack
Conduction voltage (threshold voltage)
1.1V
Dielectric structure
Anode-Cathode
Diode Configuration
independent
Diode type
rectifier diode
Driving current
6A
Forward Voltage (Max)
<1.0V / 5A
Forward voltage Vf (min)
0.9V
MRI (max)
500uA
MRI (min)
10uA
Marking on the case
6A08
Max reverse voltage
800V
Mounting Type
THT
Number of terminals
2
Operating temperature
-65...+175°C
Pulse current max.
300A
Quantity per case
1
Reverse Leakage Current
25uA / 800V
Reverse Recovery Time (Max)
1500ns
RoHS
yes
Semiconductor material
silicon
Semiconductor structure
diode
Series
P600
Spec info
IFSM--400Ap (t=8.3ms)
Threshold voltage Vf (max)
1.1V
Threshold voltage
1.1V, 900mV
Trr Diode (Min.)
2500 ns
Original product from manufacturer
Dc Components Co.

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