P600M, R-6, 6A, 6A, 400A, 6A, R-6 ( 9.1x9.1mm ), 1000V. Housing: R-6. Housing (JEDEC standard): -. Forward current (AV): 6A. Average Rectified Current per Diode: 6A. IFSM: 400A. Forward current [A]: 6A. Housing (according to data sheet): R-6 ( 9.1x9.1mm ). VRRM: 1000V. Assembly/installation: PCB through-hole mounting. Cj: 150pF. Close voltage (repetitive) Vrrm [V]: 1 kV. Component family: Standard rectifier diode. Conditioning: Ammo Pack. Conduction voltage (threshold voltage): 1.1V. Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Diode Configuration: independent. Diode type: rectifier diode. Driving current: 6A. Forward Voltage (Max): <1.0V / 5A. Forward voltage Vf (min): 1.1V. Ifsm [A]: 450A. Information: -. Leakage current on closing Ir [A]: 10uA. MRI (max): 500uA. MRI (min): 10uA. MSL: -. Marking on the case: 6A10. Max reverse voltage: 1kV, 1000V. Max temperature: +175°C.. Mounting Type: THT. Number of terminals: 2. Number of terminals: 2. Operating temperature: -65...+175°C. Pulse current max.: 300A. Quantity per case: 1. Reverse Leakage Current: 25uA / 1000V. Reverse Recovery Time (Max): 1500ns. RoHS: yes. Semiconductor material: silicon. Semiconductor structure: diode. Series: P600. Spec info: IFSM--400Ap (t=8.3ms). Switching speed (regeneration time) tr [sec.]: -. Threshold voltage Vf (max): 1.1V. Threshold voltage: 1.1V, 900mV. Trr Diode (Min.): 2500 ns. [V]: 1V @ 5A. Original product from manufacturer: Lge Technology. Quantity in stock updated on 10/31/2025, 08:27