Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.32$ | 1.32$ |
5 - 9 | 1.25$ | 1.25$ |
10 - 24 | 1.15$ | 1.15$ |
25 - 49 | 1.05$ | 1.05$ |
50 - 99 | 1.03$ | 1.03$ |
100 - 249 | 1.00$ | 1.00$ |
250 - 1700 | 0.81$ | 0.81$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.32$ | 1.32$ |
5 - 9 | 1.25$ | 1.25$ |
10 - 24 | 1.15$ | 1.15$ |
25 - 49 | 1.05$ | 1.05$ |
50 - 99 | 1.03$ | 1.03$ |
100 - 249 | 1.00$ | 1.00$ |
250 - 1700 | 0.81$ | 0.81$ |
P2000M. Cj: 110pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Forward current (AV): 20A. IFSM: 500A. MRI (min): 10uA. Marking on the case: P2000M. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.87V. VRRM: 1000V. Spec info: IFSM--500Ap 50Hz(t=10ms), 550Ap 60Hz(t=8.3ms). Quantity in stock updated on 26/12/2024, 03:25.
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