P-channel transistor STP80PF55, 80A, 80A, TO-220, TO-220AB, 55V

P-channel transistor STP80PF55, 80A, 80A, TO-220, TO-220AB, 55V

Quantity
Unit price
1-4
1.85$
5-24
1.55$
25-49
1.36$
50-99
1.23$
100+
2.36$
Quantity in stock: 28

P-channel transistor STP80PF55, 80A, 80A, TO-220, TO-220AB, 55V. ID (T=25°C): 80A. Idss (max): 80A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. Assembly/installation: PCB through-hole mounting. C(in): 5500pF. Channel type: P. Cost): 1130pF. Drain-source protection: zener diode. Function: -. G-S Protection: no. Gate/source voltage Vgs: 16V. ID (T=100°C): 57A. Id(imp): 320A. Number of terminals: 3. On-resistance Rds On: 0.016 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 300W. Quantity per case: 1. RoHS: yes. Td(off): 165 ns. Td(on): 35 ns. Technology: STripFETTM II Power MOSFET. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: Sgs Thomson. Quantity in stock updated on 10/31/2025, 08:58

STP80PF55
27 parameters
ID (T=25°C)
80A
Idss (max)
80A
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
55V
Assembly/installation
PCB through-hole mounting
C(in)
5500pF
Channel type
P
Cost)
1130pF
Drain-source protection
zener diode
G-S Protection
no
Gate/source voltage Vgs
16V
ID (T=100°C)
57A
Id(imp)
320A
Number of terminals
3
On-resistance Rds On
0.016 Ohms
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
300W
Quantity per case
1
RoHS
yes
Td(off)
165 ns
Td(on)
35 ns
Technology
STripFETTM II Power MOSFET
Trr Diode (Min.)
110 ns
Type of transistor
MOSFET
Vgs(th) min.
2V
Original product from manufacturer
Sgs Thomson