P-channel transistor SPP18P06P, 18.7A, 10uA, TO-220, TO-220, 60V. ID (T=25°C): 18.7A. Idss (max): 10uA. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. Assembly/installation: PCB through-hole mounting. C(in): 230pF. Channel type: P. Cost): 95pF. Drain-source protection: diode. Function: dv/dt rated Enhancement mode. G-S Protection: diode. Gate/source voltage Vgs: 20V. ID (T=100°C): 13.2A. IDss (min): 0.1uA. Id(imp): 74.8A. Marking on the case: 18P06P. Number of terminals: 3. On-resistance Rds On: 0.102 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 81W. Quantity per case: 1. Td(off): 25 ns. Td(on): 12 ns. Technology: SIPMOS Power-Transistor. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Vgs(th) min.: 2.7V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 07:33