P-channel transistor SPP08P06P, 8.8A, 1uA, TO-220, PG-TO220-3, 60V. ID (T=25°C): 8.8A. Idss (max): 1uA. Housing: TO-220. Housing (according to data sheet): PG-TO220-3. Voltage Vds(max): 60V. Assembly/installation: PCB through-hole mounting. C(in): 335pF. Channel type: P. Cost): 105pF. Drain-source protection: yes. Function: Enhancement mode, avalanche rated, dv/dt rated. G-S Protection: no. Gate/source voltage Vgs: 20V. ID (T=100°C): 6.2A. IDss (min): 0.1uA. Id(imp): 32.5A. On-resistance Rds On: 0.23 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 42W. Quantity per case: 1. RoHS: yes. Td(off): 48 ns. Td(on): 16 ns. Technology: SIPMOS Power-Transistor. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 07:33