P-channel transistor SI9953DY, SO8, MS-012, -20V
Quantity
Unit price
1+
0.46$
| Quantity in stock: 34 |
P-channel transistor SI9953DY, SO8, MS-012, -20V. Housing: SO8. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: -20V. Ciss Gate Capacitance [pF]: 500pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -2.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.25 Ohms @ 1A. Gate breakdown voltage Ugs [V]: -4.5V. Manufacturer's marking: SI9953DY. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2W. Number of terminals: 8. RoHS: no. Switch-off delay tf[nsec.]: 90 ns. Switch-on time ton [nsec.]: 40 ns. Original product from manufacturer: Vishay (siliconix). Quantity in stock updated on 11/02/2025, 22:25
SI9953DY
17 parameters
Housing
SO8
Housing (JEDEC standard)
MS-012
Drain-source voltage Uds [V]
-20V
Ciss Gate Capacitance [pF]
500pF
Component family
MOSFET, P-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
-2.3A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.25 Ohms @ 1A
Gate breakdown voltage Ugs [V]
-4.5V
Manufacturer's marking
SI9953DY
Max temperature
+150°C.
Maximum dissipation Ptot [W]
2W
Number of terminals
8
RoHS
no
Switch-off delay tf[nsec.]
90 ns
Switch-on time ton [nsec.]
40 ns
Original product from manufacturer
Vishay (siliconix)