P-channel transistor SI9407BDY, 4.7A, 10nA, SO, SO-8, 60V. ID (T=25°C): 4.7A. Idss (max): 10nA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 60V. Assembly/installation: surface-mounted component (SMD). C(in): 600pF. Channel type: P. Cost): 70pF. Drain-source protection: diode. G-S Protection: no. Gate/source voltage Vgs: 20V. ID (T=100°C): 3.8A. IDss (min): 1nA. Id(imp): 30A. Number of terminals: 8. On-resistance Rds On: 0.10 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 3.2W. Quantity per case: 1. RoHS: yes. Td(off): 35 ns. Td(on): 10 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Vgs(th) min.: 1V. Original product from manufacturer: Vishay. Quantity in stock updated on 10/31/2025, 08:14