P-channel transistor SI4925BDY, 7.1A, 7.1A, SO, SO-8, 30 v
Quantity
Unit price
1-4
1.56$
5-49
1.29$
50-99
1.15$
100+
1.01$
| Quantity in stock: 2254 |
P-channel transistor SI4925BDY, 7.1A, 7.1A, SO, SO-8, 30 v. ID (T=25°C): 7.1A. Idss (max): 7.1A. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). Channel type: P. Drain-source protection: yes. G-S Protection: no. ID (T=100°C): 5.7A. IDss (min): 1uA. Number of terminals: 8. On-resistance Rds On: 0.02 Ohms. Pd (Power Dissipation, Max): 1uA. Quantity per case: 2. RoHS: yes. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Trr Diode (Min.): 60 ns. Original product from manufacturer: Vishay. Quantity in stock updated on 10/31/2025, 09:07
SI4925BDY
19 parameters
ID (T=25°C)
7.1A
Idss (max)
7.1A
Housing
SO
Housing (according to data sheet)
SO-8
Voltage Vds(max)
30 v
Assembly/installation
surface-mounted component (SMD)
Channel type
P
Drain-source protection
yes
G-S Protection
no
ID (T=100°C)
5.7A
IDss (min)
1uA
Number of terminals
8
On-resistance Rds On
0.02 Ohms
Pd (Power Dissipation, Max)
1uA
Quantity per case
2
RoHS
yes
Technology
TrenchFET ® Power MOSFET (D-S) MOSFET
Trr Diode (Min.)
60 ns
Original product from manufacturer
Vishay