P-channel transistor SI4435BDY, 7A, 5uA, SO, SO-8, 30 v. ID (T=25°C): 7A. Idss (max): 5uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). Channel type: P. Drain-source protection: diode. G-S Protection: no. Gate/source voltage Vgs: 20V. ID (T=100°C): 5.6A. IDss (min): 1uA. Id(imp): 50A. Number of terminals: 8. On-resistance Rds On: 0.015 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 1.5W. Quantity per case: 1. RoHS: yes. Td(off): 110 ns. Td(on): 10 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. Vgs(th) min.: 1V. Original product from manufacturer: Vishay. Quantity in stock updated on 10/31/2025, 08:14