P-channel transistor SI4431BDY-T1-E3, SO8, MS-012, -30V. Housing: SO8. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: -30V. Ciss Gate Capacitance [pF]: 1600pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -5.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.03 Ohms @ -7.5A. Gate breakdown voltage Ugs [V]: -3V. Manufacturer's marking: SI4431BDY-T1-E3. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 1.5W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 110 ns. Switch-on time ton [nsec.]: 20 ns. Original product from manufacturer: Vishay (siliconix). Quantity in stock updated on 11/02/2025, 21:47