P-channel transistor SI3441BD, 2.45A, 5nA, TSOP, TSOP-6, 20V

P-channel transistor SI3441BD, 2.45A, 5nA, TSOP, TSOP-6, 20V

Quantity
Unit price
1-4
0.30$
5-49
0.22$
50-99
0.18$
100+
0.16$
Quantity in stock: 2713

P-channel transistor SI3441BD, 2.45A, 5nA, TSOP, TSOP-6, 20V. ID (T=25°C): 2.45A. Idss (max): 5nA. Housing: TSOP. Housing (according to data sheet): TSOP-6. Voltage Vds(max): 20V. Assembly/installation: surface-mounted component (SMD). Channel type: P. Drain-source protection: yes. G-S Protection: no. Gate/source voltage Vgs: 8V. ID (T=100°C): 1.95A. IDss (min): 1nA. Id(imp): 16A. Number of terminals: 6. On-resistance Rds On: 0.07 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 1nA. Quantity per case: 1. RoHS: yes. Td(off): 30 ns. Td(on): 15 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Vgs(th) min.: 0.45V. Original product from manufacturer: Vishay. Quantity in stock updated on 10/31/2025, 08:14

Technical documentation (PDF)
SI3441BD
26 parameters
ID (T=25°C)
2.45A
Idss (max)
5nA
Housing
TSOP
Housing (according to data sheet)
TSOP-6
Voltage Vds(max)
20V
Assembly/installation
surface-mounted component (SMD)
Channel type
P
Drain-source protection
yes
G-S Protection
no
Gate/source voltage Vgs
8V
ID (T=100°C)
1.95A
IDss (min)
1nA
Id(imp)
16A
Number of terminals
6
On-resistance Rds On
0.07 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
1nA
Quantity per case
1
RoHS
yes
Td(off)
30 ns
Td(on)
15 ns
Technology
TrenchFET ® Power MOSFET (D-S) MOSFET
Trr Diode (Min.)
50 ns
Type of transistor
MOSFET
Vgs(th) min.
0.45V
Original product from manufacturer
Vishay