P-channel transistor SI2333CDS-T1-GE3, SOT-23, -12V

P-channel transistor SI2333CDS-T1-GE3, SOT-23, -12V

Quantity
Unit price
1+
1.12$
Quantity in stock: 2126

P-channel transistor SI2333CDS-T1-GE3, SOT-23, -12V. Housing: SOT-23. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -12V. Ciss Gate Capacitance [pF]: 1225pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -7.1A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.035 Ohms @ -5.1A. Gate breakdown voltage Ugs [V]: -1V. Manufacturer's marking: 3. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2.5W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 70 ns. Switch-on time ton [nsec.]: 20 ns. Original product from manufacturer: Vishay. Quantity in stock updated on 11/02/2025, 22:31

Technical documentation (PDF)
SI2333CDS-T1-GE3
16 parameters
Housing
SOT-23
Drain-source voltage Uds [V]
-12V
Ciss Gate Capacitance [pF]
1225pF
Component family
MOSFET, P-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
-7.1A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.035 Ohms @ -5.1A
Gate breakdown voltage Ugs [V]
-1V
Manufacturer's marking
3
Max temperature
+150°C.
Maximum dissipation Ptot [W]
2.5W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
70 ns
Switch-on time ton [nsec.]
20 ns
Original product from manufacturer
Vishay