P-channel transistor SI2323DS-T1-E3, SOT-23, -20V. Housing: SOT-23. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -20V. Ciss Gate Capacitance [pF]: 1020pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -4.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.039 Ohms @ -4.7A. Gate breakdown voltage Ugs [V]: -1.0V. Manufacturer's marking: D3. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.75W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 71 ns. Switch-on time ton [nsec.]: 25 ns. Original product from manufacturer: Vishay. Quantity in stock updated on 11/02/2025, 20:19