P-channel transistor SI2319CDS-T1-GE3, SOT-23, -40V. Housing: SOT-23. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -40V. Ciss Gate Capacitance [pF]: 595pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -3.1A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.077 Ohm @ -4.4A. Gate breakdown voltage Ugs [V]: -2.5V. Manufacturer's marking: P7. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.8W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 27 ns. Switch-on time ton [nsec.]: 60 ns. Original product from manufacturer: Vishay. Quantity in stock updated on 11/02/2025, 21:53