P-channel transistor SI2315BDS-T1-E3, SOT-23, -12V. Housing: SOT-23. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -12V. Ciss Gate Capacitance [pF]: 715pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms @ -3.4A. Gate breakdown voltage Ugs [V]: -0.9V. Manufacturer's marking: M5. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.75W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 70 ns. Switch-on time ton [nsec.]: 20 ns. Original product from manufacturer: Vishay. Quantity in stock updated on 11/02/2025, 22:31