P-channel transistor SI2309CDS-T1-GE3, SOT-23, MS-012, -60V. Housing: SOT-23. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: -60V. Ciss Gate Capacitance [pF]: 210pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -1.2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.34 Ohms @ -1.25A. Gate breakdown voltage Ugs [V]: -3V. Manufacturer's marking: N9. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 1.7W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 25 ns. Switch-on time ton [nsec.]: 60 ns. Original product from manufacturer: Vishay (siliconix). Quantity in stock updated on 11/02/2025, 22:31