P-channel transistor SI2307CDS, SOT-23, -30V
Quantity
Unit price
1-99
1.40$
100+
0.93$
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| Quantity in stock: 14932 |
P-channel transistor SI2307CDS, SOT-23, -30V. Housing: SOT-23. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -30V. Ciss Gate Capacitance [pF]: 340pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -2.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.138 Ohms @ -2.2A. Gate breakdown voltage Ugs [V]: -3V. Manufacturer's marking: N7. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 1.8W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 40 ns. Switch-on time ton [nsec.]: 60 ns. Original product from manufacturer: Vishay (siliconix). Quantity in stock updated on 11/02/2025, 23:36
SI2307CDS
16 parameters
Housing
SOT-23
Drain-source voltage Uds [V]
-30V
Ciss Gate Capacitance [pF]
340pF
Component family
MOSFET, P-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
-2.7A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.138 Ohms @ -2.2A
Gate breakdown voltage Ugs [V]
-3V
Manufacturer's marking
N7
Max temperature
+150°C.
Maximum dissipation Ptot [W]
1.8W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
40 ns
Switch-on time ton [nsec.]
60 ns
Original product from manufacturer
Vishay (siliconix)