P-channel transistor RSQ035P03, 3.5A, 1uA, TSOP, TSMT6, 30 v

P-channel transistor RSQ035P03, 3.5A, 1uA, TSOP, TSMT6, 30 v

Quantity
Unit price
1-4
0.86$
5-49
0.69$
50-99
0.58$
100+
0.53$
Equivalence available
Quantity in stock: 65

P-channel transistor RSQ035P03, 3.5A, 1uA, TSOP, TSMT6, 30 v. ID (T=25°C): 3.5A. Idss (max): 1uA. Housing: TSOP. Housing (according to data sheet): TSMT6. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 780pF. Channel type: P. Conditioning unit: 3000. Conditioning: roll. Cost): 180pF. Drain-source protection: diode. Function: DC-DC voltage converter. G-S Protection: yes. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 14A. Marking on the case: TM. Number of terminals: 6. On-resistance Rds On: 65m Ohms. Pd (Power Dissipation, Max): 1.25W. Pitch: 2.9x1.6mm. Quantity per case: 1. RoHS: yes. Td(off): 45 ns. Td(on): 15 ns. Technology: Power MOSFET. Temperature: +150°C. Type of transistor: MOSFET. Vgs(th) min.: 1V. Original product from manufacturer: ROHM. Quantity in stock updated on 10/31/2025, 08:13

Technical documentation (PDF)
RSQ035P03
31 parameters
ID (T=25°C)
3.5A
Idss (max)
1uA
Housing
TSOP
Housing (according to data sheet)
TSMT6
Voltage Vds(max)
30 v
Assembly/installation
surface-mounted component (SMD)
C(in)
780pF
Channel type
P
Conditioning unit
3000
Conditioning
roll
Cost)
180pF
Drain-source protection
diode
Function
DC-DC voltage converter
G-S Protection
yes
Gate/source voltage Vgs
20V
IDss (min)
1uA
Id(imp)
14A
Marking on the case
TM
Number of terminals
6
On-resistance Rds On
65m Ohms
Pd (Power Dissipation, Max)
1.25W
Pitch
2.9x1.6mm
Quantity per case
1
RoHS
yes
Td(off)
45 ns
Td(on)
15 ns
Technology
Power MOSFET
Temperature
+150°C
Type of transistor
MOSFET
Vgs(th) min.
1V
Original product from manufacturer
ROHM

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