P-channel transistor RJP63F4A, TO-220FP, TO-220F, 630V

P-channel transistor RJP63F4A, TO-220FP, TO-220F, 630V

Quantity
Unit price
1-4
15.53$
5-9
14.66$
10-24
13.71$
25+
12.76$
Obsolete product, soon to be removed from the catalog
Out of stock

P-channel transistor RJP63F4A, TO-220FP, TO-220F, 630V. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 630V. Assembly/installation: PCB through-hole mounting. C(in): 1250pF. CE diode: no. Channel type: P. Collector current: 40A. Cost): 40pF. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Gate/emitter voltage VGE: 30 v. Germanium diode: no. Ic(pulse): 200A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 30W. RoHS: yes. Saturation voltage VCE(sat): 1.7V. Spec info: Panasonic--TX-P50VT20EA. Td(off): 50 ns. Td(on): 20 ns. Original product from manufacturer: Panasonic. Quantity in stock updated on 10/31/2025, 08:13

Technical documentation (PDF)
RJP63F4A
23 parameters
Housing
TO-220FP
Housing (according to data sheet)
TO-220F
Collector/emitter voltage Vceo
630V
Assembly/installation
PCB through-hole mounting
C(in)
1250pF
CE diode
no
Channel type
P
Collector current
40A
Cost)
40pF
Gate/emitter voltage VGE(th) min.
2.5V
Gate/emitter voltage VGE(th)max.
5V
Gate/emitter voltage VGE
30 v
Germanium diode
no
Ic(pulse)
200A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
30W
RoHS
yes
Saturation voltage VCE(sat)
1.7V
Spec info
Panasonic--TX-P50VT20EA
Td(off)
50 ns
Td(on)
20 ns
Original product from manufacturer
Panasonic