P-channel transistor NTD2955-1G, TO-251 ( I-Pak ), -60V, 12A, 100uA, TO-251 ( I-Pak ), 60V. Housing: TO-251 ( I-Pak ). Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -60V. ID (T=25°C): 12A. Idss (max): 100uA. Housing (according to data sheet): TO-251 ( I-Pak ). Voltage Vds(max): 60V. Assembly/installation: PCB through-hole mounting. C(in): 500pF. Channel type: P. Ciss Gate Capacitance [pF]: 750pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Cost): 150pF. Drain current Id (A) @ 25°C: -12A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.18 Ohms @ -6A. Drain-source protection: yes. G-S Protection: no. Gate breakdown voltage Ugs [V]: -4V. Gate/source voltage Vgs: 20V. IDss (min): 10uA. Id(imp): 18A. Manufacturer's marking: NT2955G. Marking on the case: NT2955. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 55W. Number of terminals: 3. On-resistance Rds On: 0.155 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 55W. Quantity per case: 1. RoHS: yes. Spec info: ID pulse 36A/10ms. Switch-off delay tf[nsec.]: 40 ns. Switch-on time ton [nsec.]: 20 ns. Td(off): 26 ns. Td(on): 10 ns. Technology: Power MOSFET. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:27