P-channel transistor NDT452AP, SOT-223, -30V

P-channel transistor NDT452AP, SOT-223, -30V

Quantity
Unit price
1+
2.24$
Quantity in stock: 1017

P-channel transistor NDT452AP, SOT-223, -30V. Housing: SOT-223. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -30V. Ciss Gate Capacitance [pF]: 690pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.065 Ohms @ -5A. Gate breakdown voltage Ugs [V]: -2.8V. Manufacturer's marking: NDT452AP. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 1.3W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 50 ns. Switch-on time ton [nsec.]: 20 ns. Original product from manufacturer: Onsemi (fairchild). Quantity in stock updated on 11/02/2025, 22:31

NDT452AP
16 parameters
Housing
SOT-223
Drain-source voltage Uds [V]
-30V
Ciss Gate Capacitance [pF]
690pF
Component family
MOSFET, P-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
-5A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.065 Ohms @ -5A
Gate breakdown voltage Ugs [V]
-2.8V
Manufacturer's marking
NDT452AP
Max temperature
+150°C.
Maximum dissipation Ptot [W]
1.3W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
50 ns
Switch-on time ton [nsec.]
20 ns
Original product from manufacturer
Onsemi (fairchild)