P-channel transistor NDS352AP, SOT-23, -30V. Housing: SOT-23. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -30V. Ciss Gate Capacitance [pF]: 135pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -0.9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.5 Ohms @ -0.9A. Gate breakdown voltage Ugs [V]: -2.5V. Manufacturer's marking: NDS352APRL. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.5W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 70 ns. Switch-on time ton [nsec.]: 10 ns. Original product from manufacturer: Onsemi (fairchild). Quantity in stock updated on 11/02/2025, 22:31