P-channel transistor NDS332P, 1A, 10uA, SSOT, SSOT-3 ( SuperSOT-3 ), 20V

P-channel transistor NDS332P, 1A, 10uA, SSOT, SSOT-3 ( SuperSOT-3 ), 20V

Quantity
Unit price
1-4
0.24$
5-49
0.17$
50-99
0.15$
100+
0.14$
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Quantity in stock: 969

P-channel transistor NDS332P, 1A, 10uA, SSOT, SSOT-3 ( SuperSOT-3 ), 20V. ID (T=25°C): 1A. Idss (max): 10uA. Housing: SSOT. Housing (according to data sheet): SSOT-3 ( SuperSOT-3 ). Voltage Vds(max): 20V. Assembly/installation: surface-mounted component (SMD). C(in): 195pF. Channel type: P. Cost): 105pF. Drain-source protection: yes. Function: Logic Level Enhancement Mode. G-S Protection: no. Gate/source voltage Vgs: 8V. IDss (min): 1uA. IGF: 1A. Id(imp): 10A. Number of terminals: 3. On-resistance Rds On: 0.35 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.5W. Quantity per case: 1. RoHS: yes. Td(off): 25 ns. Td(on): 8 ns. Type of transistor: MOSFET. Vgs(th) max.: 1V. Vgs(th) min.: 0.4V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
NDS332P
28 parameters
ID (T=25°C)
1A
Idss (max)
10uA
Housing
SSOT
Housing (according to data sheet)
SSOT-3 ( SuperSOT-3 )
Voltage Vds(max)
20V
Assembly/installation
surface-mounted component (SMD)
C(in)
195pF
Channel type
P
Cost)
105pF
Drain-source protection
yes
Function
Logic Level Enhancement Mode
G-S Protection
no
Gate/source voltage Vgs
8V
IDss (min)
1uA
IGF
1A
Id(imp)
10A
Number of terminals
3
On-resistance Rds On
0.35 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
0.5W
Quantity per case
1
RoHS
yes
Td(off)
25 ns
Td(on)
8 ns
Type of transistor
MOSFET
Vgs(th) max.
1V
Vgs(th) min.
0.4V
Original product from manufacturer
Fairchild