P-channel transistor IXTK90P20P, 90A, 250uA, TO-264 ( TOP-3L ), TO-264, 200V

P-channel transistor IXTK90P20P, 90A, 250uA, TO-264 ( TOP-3L ), TO-264, 200V

Quantity
Unit price
1-4
25.94$
5-9
24.70$
10-19
23.24$
20+
21.91$
Quantity in stock: 22

P-channel transistor IXTK90P20P, 90A, 250uA, TO-264 ( TOP-3L ), TO-264, 200V. ID (T=25°C): 90A. Idss (max): 250uA. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 12pF. Channel type: P. Cost): 2210pF. Drain-source protection: diode. Function: P-Channel Enhancement Mode. G-S Protection: no. Gate/source voltage Vgs: 20V. ID (T=100°C): -. IDss (min): 50uA. Id(imp): 270A. Number of terminals: 3. On-resistance Rds On: 0.044 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 890W. Quantity per case: 1. RoHS: yes. Td(off): 89 ns. Td(on): 32 ns. Technology: PolarPTM Power MOSFET. Trr Diode (Min.): 315 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: IXYS. Quantity in stock updated on 10/31/2025, 07:04

Technical documentation (PDF)
IXTK90P20P
28 parameters
ID (T=25°C)
90A
Idss (max)
250uA
Housing
TO-264 ( TOP-3L )
Housing (according to data sheet)
TO-264
Voltage Vds(max)
200V
Assembly/installation
PCB through-hole mounting
C(in)
12pF
Channel type
P
Cost)
2210pF
Drain-source protection
diode
Function
P-Channel Enhancement Mode
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
50uA
Id(imp)
270A
Number of terminals
3
On-resistance Rds On
0.044 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
890W
Quantity per case
1
RoHS
yes
Td(off)
89 ns
Td(on)
32 ns
Technology
PolarPTM Power MOSFET
Trr Diode (Min.)
315 ns
Type of transistor
MOSFET
Vgs(th) min.
2V
Original product from manufacturer
IXYS