P-channel transistor IXGR40N60B2D1, 200A, ISOPLUS247 ( TO-247 ), ISOPLUS247, 600V

P-channel transistor IXGR40N60B2D1, 200A, ISOPLUS247 ( TO-247 ), ISOPLUS247, 600V

Quantity
Unit price
1-4
16.26$
5-9
15.05$
10-24
14.07$
25+
13.27$
Quantity in stock: 11

P-channel transistor IXGR40N60B2D1, 200A, ISOPLUS247 ( TO-247 ), ISOPLUS247, 600V. Ic(T=100°C): 200A. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247. Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. C(in): 2560pF. CE diode: yes. Channel type: P. Collector current: 60A. Cost): 210pF. Function: C2-Class High Speed IGBT. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 33A. Note: insulated-case. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 167W. RoHS: yes. Saturation voltage VCE(sat): 1.9V. Td(off): 130 ns. Td(on): 18 ns. Trr Diode (Min.): 25 ns. Original product from manufacturer: IXYS. Quantity in stock updated on 10/31/2025, 06:57

Technical documentation (PDF)
IXGR40N60B2D1
26 parameters
Ic(T=100°C)
200A
Housing
ISOPLUS247 ( TO-247 )
Housing (according to data sheet)
ISOPLUS247
Collector/emitter voltage Vceo
600V
Assembly/installation
PCB through-hole mounting
C(in)
2560pF
CE diode
yes
Channel type
P
Collector current
60A
Cost)
210pF
Function
C2-Class High Speed IGBT
Gate/emitter voltage VGE(th) min.
3V
Gate/emitter voltage VGE(th)max.
5V
Gate/emitter voltage VGE
20V
Germanium diode
no
Ic(pulse)
33A
Note
insulated-case
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
167W
RoHS
yes
Saturation voltage VCE(sat)
1.9V
Td(off)
130 ns
Td(on)
18 ns
Trr Diode (Min.)
25 ns
Original product from manufacturer
IXYS