P-channel transistor IRLML6402, 3.7A, 25uA, SOT-23 ( TO-236 ), SOT-23 ( TO-236AB ) ( Micro3 ), 20V

P-channel transistor IRLML6402, 3.7A, 25uA, SOT-23 ( TO-236 ), SOT-23 ( TO-236AB ) ( Micro3 ), 20V

Quantity
Unit price
1-4
0.32$
5-49
0.27$
50-99
0.23$
100-199
0.20$
200+
0.16$
Quantity in stock: 275

P-channel transistor IRLML6402, 3.7A, 25uA, SOT-23 ( TO-236 ), SOT-23 ( TO-236AB ) ( Micro3 ), 20V. ID (T=25°C): 3.7A. Idss (max): 25uA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO-236AB ) ( Micro3 ). Voltage Vds(max): 20V. Assembly/installation: surface-mounted component (SMD). C(in): 633pF. Channel type: P. Cost): 145pF. Drain-source protection: yes. Function: Ultra Low On-Resistance. G-S Protection: no. ID (T=100°C): 2.2A. IDss (min): 1uA. Id(imp): 22A. Number of terminals: 3. On-resistance Rds On: 0.05 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 1.3W. Quantity per case: 1. Td(off): 588 ns. Td(on): 350 ns. Technology: HEXFET Power MOSFET. Type of transistor: MOSFET. Vgs(th) max.: 1.2V. Vgs(th) min.: 0.4V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 08:13

Technical documentation (PDF)
IRLML6402
27 parameters
ID (T=25°C)
3.7A
Idss (max)
25uA
Housing
SOT-23 ( TO-236 )
Housing (according to data sheet)
SOT-23 ( TO-236AB ) ( Micro3 )
Voltage Vds(max)
20V
Assembly/installation
surface-mounted component (SMD)
C(in)
633pF
Channel type
P
Cost)
145pF
Drain-source protection
yes
Function
Ultra Low On-Resistance
G-S Protection
no
ID (T=100°C)
2.2A
IDss (min)
1uA
Id(imp)
22A
Number of terminals
3
On-resistance Rds On
0.05 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
1.3W
Quantity per case
1
Td(off)
588 ns
Td(on)
350 ns
Technology
HEXFET Power MOSFET
Type of transistor
MOSFET
Vgs(th) max.
1.2V
Vgs(th) min.
0.4V
Original product from manufacturer
International Rectifier