P-channel transistor IRLML6302, SOT23
Quantity
Unit price
1-4
1.49$
5-9
0.93$
10-19
0.80$
20-49
0.73$
50+
0.68$
| Quantity in stock: 50 |
P-channel transistor IRLML6302, SOT23. Housing: SOT23. Assembly/installation: SMD. Charge: 2.4nC. Drain current: -620mA, -0.62A. Drain-source voltage: -20V. Gate-source voltage: 12V, ±12V. Polarity: unipolar. Power: 0.54W. Properties of semiconductor: Logic Level. RoHS: yes. Technology: HEXFET®. Thermal resistance: 230K/W. Original product from manufacturer: Infineon (irf). Quantity in stock updated on 11/01/2025, 15:21
IRLML6302
13 parameters
Housing
SOT23
Assembly/installation
SMD
Charge
2.4nC
Drain current
-620mA, -0.62A
Drain-source voltage
-20V
Gate-source voltage
12V, ±12V
Polarity
unipolar
Power
0.54W
Properties of semiconductor
Logic Level
RoHS
yes
Technology
HEXFET®
Thermal resistance
230K/W
Original product from manufacturer
Infineon (irf)