P-channel transistor IRFR9220, 3.6A, 500uA, D-PAK ( TO-252AA ), 200V

P-channel transistor IRFR9220, 3.6A, 500uA, D-PAK ( TO-252AA ), 200V

Quantity
Unit price
1-4
1.07$
5-24
0.90$
25-49
0.79$
50-99
0.76$
100+
0.58$
Quantity in stock: 87

P-channel transistor IRFR9220, 3.6A, 500uA, D-PAK ( TO-252AA ), 200V. ID (T=25°C): 3.6A. Idss (max): 500uA. Housing (according to data sheet): D-PAK ( TO-252AA ). Voltage Vds(max): 200V. Assembly/installation: surface-mounted component (SMD). C(in): 340pF. Channel type: P. Cost): 110pF. Drain-source protection: yes. Function: dynamic dv/dt ratio, fast switching. G-S Protection: no. Gate/emitter voltage VGE(th) min.: 2V. Gate/source voltage Vgs: 20V. ID (T=100°C): 2.3A. IDss (min): 100uA. Id(imp): 14A. On-resistance Rds On: 1.5 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 42W. Quantity per case: 1. Td(off): 7.3 ns. Td(on): 8.8 ns. Technology: Power MOSFET. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:37

Technical documentation (PDF)
IRFR9220
27 parameters
ID (T=25°C)
3.6A
Idss (max)
500uA
Housing (according to data sheet)
D-PAK ( TO-252AA )
Voltage Vds(max)
200V
Assembly/installation
surface-mounted component (SMD)
C(in)
340pF
Channel type
P
Cost)
110pF
Drain-source protection
yes
Function
dynamic dv/dt ratio, fast switching
G-S Protection
no
Gate/emitter voltage VGE(th) min.
2V
Gate/source voltage Vgs
20V
ID (T=100°C)
2.3A
IDss (min)
100uA
Id(imp)
14A
On-resistance Rds On
1.5 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
42W
Quantity per case
1
Td(off)
7.3 ns
Td(on)
8.8 ns
Technology
Power MOSFET
Trr Diode (Min.)
150 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Original product from manufacturer
International Rectifier