P-channel transistor IRFR5505, 18A, 250uA, D-PAK ( TO-252 ), D-PAK TO-252AA, 55V

P-channel transistor IRFR5505, 18A, 250uA, D-PAK ( TO-252 ), D-PAK TO-252AA, 55V

Quantity
Unit price
1-4
0.96$
5-24
0.79$
25-49
0.69$
50-99
0.62$
100+
0.54$
Quantity in stock: 91

P-channel transistor IRFR5505, 18A, 250uA, D-PAK ( TO-252 ), D-PAK TO-252AA, 55V. ID (T=25°C): 18A. Idss (max): 250uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 55V. Assembly/installation: surface-mounted component (SMD). C(in): 650pF. Channel type: P. Cost): 270pF. Drain-source protection: yes. Equivalents: IRFR5505TRLPBF, IRFR5505TRPBF. Function: High-speed switching. G-S Protection: no. ID (T=100°C): 11A. IDss (min): 25uA. Id(imp): 64A. On-resistance Rds On: 0.11 Ohms. Pd (Power Dissipation, Max): 57W. Quantity per case: 1. RoHS: yes. Td(off): 20 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:37

Technical documentation (PDF)
IRFR5505
27 parameters
ID (T=25°C)
18A
Idss (max)
250uA
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
D-PAK TO-252AA
Voltage Vds(max)
55V
Assembly/installation
surface-mounted component (SMD)
C(in)
650pF
Channel type
P
Cost)
270pF
Drain-source protection
yes
Equivalents
IRFR5505TRLPBF, IRFR5505TRPBF
Function
High-speed switching
G-S Protection
no
ID (T=100°C)
11A
IDss (min)
25uA
Id(imp)
64A
On-resistance Rds On
0.11 Ohms
Pd (Power Dissipation, Max)
57W
Quantity per case
1
RoHS
yes
Td(off)
20 ns
Td(on)
12 ns
Technology
HEXFET Power MOSFET
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier