P-channel transistor IRFL9110PBF, SOT-223, -100V
Quantity
		Unit price
	  1+
		  1.68$
		| Quantity in stock: 42 | 
P-channel transistor IRFL9110PBF, SOT-223, -100V. Housing: SOT-223. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -100V. Ciss Gate Capacitance [pF]: 200pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -1.1A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ -0.66A. Gate breakdown voltage Ugs [V]: -4V. Manufacturer's marking: FF. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 3.1W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 15 ns. Switch-on time ton [nsec.]: 10 ns. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/02/2025, 21:47
IRFL9110PBF
		16 parameters
	  Housing
		  SOT-223
		Drain-source voltage Uds [V]
		  -100V
		Ciss Gate Capacitance [pF]
		  200pF
		Component family
		  MOSFET, P-MOS
		Configuration
		  surface-mounted component (SMD)
		Drain current Id (A) @ 25°C
		  -1.1A
		Drain current through resistor Rds [Ohm] @ Ids [A]
		  1.2 Ohms @ -0.66A
		Gate breakdown voltage Ugs [V]
		  -4V
		Manufacturer's marking
		  FF
		Max temperature
		  +150°C.
		Maximum dissipation Ptot [W]
		  3.1W
		Number of terminals
		  3
		RoHS
		  yes
		Switch-off delay tf[nsec.]
		  15 ns
		Switch-on time ton [nsec.]
		  10 ns
		Original product from manufacturer
		  Vishay (ir)