P-channel transistor IRFL9110PBF, SOT-223, -100V

P-channel transistor IRFL9110PBF, SOT-223, -100V

Quantity
Unit price
1+
1.68$
Quantity in stock: 42

P-channel transistor IRFL9110PBF, SOT-223, -100V. Housing: SOT-223. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -100V. Ciss Gate Capacitance [pF]: 200pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -1.1A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ -0.66A. Gate breakdown voltage Ugs [V]: -4V. Manufacturer's marking: FF. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 3.1W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 15 ns. Switch-on time ton [nsec.]: 10 ns. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/02/2025, 21:47

Technical documentation (PDF)
IRFL9110PBF
16 parameters
Housing
SOT-223
Drain-source voltage Uds [V]
-100V
Ciss Gate Capacitance [pF]
200pF
Component family
MOSFET, P-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
-1.1A
Drain current through resistor Rds [Ohm] @ Ids [A]
1.2 Ohms @ -0.66A
Gate breakdown voltage Ugs [V]
-4V
Manufacturer's marking
FF
Max temperature
+150°C.
Maximum dissipation Ptot [W]
3.1W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
15 ns
Switch-on time ton [nsec.]
10 ns
Original product from manufacturer
Vishay (ir)