P-channel transistor IRFL9110, 1.1A, 500uA, SOT-223 ( TO-226 ), SOT-223, 100V

P-channel transistor IRFL9110, 1.1A, 500uA, SOT-223 ( TO-226 ), SOT-223, 100V

Quantity
Unit price
1-4
0.82$
5-49
0.69$
50-99
0.58$
100-199
0.53$
200+
0.44$
Quantity in stock: 78

P-channel transistor IRFL9110, 1.1A, 500uA, SOT-223 ( TO-226 ), SOT-223, 100V. ID (T=25°C): 1.1A. Idss (max): 500uA. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 100V. Assembly/installation: surface-mounted component (SMD). C(in): 200pF. Channel type: P. Cost): 94pF. Drain-source protection: yes. G-S Protection: no. Gate/source voltage Vgs: 20V. ID (T=100°C): 0.69A. IDss (min): 100uA. Id(imp): 8.8A. On-resistance Rds On: 1.2 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 3.1W. Quantity per case: 1. RoHS: yes. Td(off): 15 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Vishay. Quantity in stock updated on 10/31/2025, 09:37

Technical documentation (PDF)
IRFL9110
28 parameters
ID (T=25°C)
1.1A
Idss (max)
500uA
Housing
SOT-223 ( TO-226 )
Housing (according to data sheet)
SOT-223
Voltage Vds(max)
100V
Assembly/installation
surface-mounted component (SMD)
C(in)
200pF
Channel type
P
Cost)
94pF
Drain-source protection
yes
G-S Protection
no
Gate/source voltage Vgs
20V
ID (T=100°C)
0.69A
IDss (min)
100uA
Id(imp)
8.8A
On-resistance Rds On
1.2 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
3.1W
Quantity per case
1
RoHS
yes
Td(off)
15 ns
Td(on)
10 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
80 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Vishay