P-channel transistor IRFD9220, DIP, 0.56A, 0.56A, DH-1 house, DIP-4, 200V

P-channel transistor IRFD9220, DIP, 0.56A, 0.56A, DH-1 house, DIP-4, 200V

Quantity
Unit price
1-4
1.09$
5-24
0.90$
25-49
0.76$
50+
0.69$
+25 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 26

P-channel transistor IRFD9220, DIP, 0.56A, 0.56A, DH-1 house, DIP-4, 200V. Housing: DIP. ID (T=25°C): 0.56A. Idss (max): 0.56A. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. Channel type: P. Charge: 15nC. Drain current: -600mA, -0.36A. Drain-source voltage: -200V. Function: P-channel MOSFET transistor. Gate-source voltage: ±20V. ID (T=100°C): 0.34A. Manufacturer's marking: IRFD9220PBF. Number of terminals: 4. On-resistance Rds On: 1.5 Ohms. Pd (Power Dissipation, Max): 1W. Polarity: unipolar. Power: 1W. Quantity per case: 1. RoHS: yes. Technology: HEXFET Power MOSFET. Type of transistor: P-MOSFET. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:37

Technical documentation (PDF)
IRFD9220
24 parameters
Housing
DIP
ID (T=25°C)
0.56A
Idss (max)
0.56A
Housing (according to data sheet)
DH-1 house, DIP-4
Voltage Vds(max)
200V
Assembly/installation
PCB through-hole mounting
Channel type
P
Charge
15nC
Drain current
-600mA, -0.36A
Drain-source voltage
-200V
Function
P-channel MOSFET transistor
Gate-source voltage
±20V
ID (T=100°C)
0.34A
Manufacturer's marking
IRFD9220PBF
Number of terminals
4
On-resistance Rds On
1.5 Ohms
Pd (Power Dissipation, Max)
1W
Polarity
unipolar
Power
1W
Quantity per case
1
RoHS
yes
Technology
HEXFET Power MOSFET
Type of transistor
P-MOSFET
Original product from manufacturer
International Rectifier