P-channel transistor IRFD9120PBF, DIP4, -100V. Housing: DIP4. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -100V. Ciss Gate Capacitance [pF]: 390pF. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: -1A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.6 Ohms @ -0.6A. Gate breakdown voltage Ugs [V]: -4V. Manufacturer's marking: IRFD9120PBF. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 1.3W. Number of terminals: 4. RoHS: yes. Switch-off delay tf[nsec.]: 21 ns. Switch-on time ton [nsec.]: 9.6 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/02/2025, 22:25