P-channel transistor IRFD9120, DIP, 0.1A, 0.1A, DH-1 house, DIP-4, 100V
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P-channel transistor IRFD9120, DIP, 0.1A, 0.1A, DH-1 house, DIP-4, 100V. Housing: DIP. ID (T=25°C): 0.1A. Idss (max): 0.1A. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. Channel type: P. Charge: 18nC. Drain current: -1A, -0.7A. Drain-source voltage: -100V. Function: P-channel MOSFET transistor. Gate-source voltage: ±20V. ID (T=100°C): 0.6A. Manufacturer's marking: IRFD9120PBF. Number of terminals: 4. On-resistance Rds On: 0.6 Ohms. Pd (Power Dissipation, Max): 1.3W. Polarity: unipolar. Power: 1.3W. Quantity per case: 1. RoHS: yes. Technology: HEXFET Power MOSFET. Type of transistor: P-MOSFET. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:37