P-channel transistor IRFD9110PBF, HEXDIP, -100V, 0.7A, -100V

P-channel transistor IRFD9110PBF, HEXDIP, -100V, 0.7A, -100V

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Quantity in stock: 27

P-channel transistor IRFD9110PBF, HEXDIP, -100V, 0.7A, -100V. Housing: HEXDIP. Drain-source voltage (Vds): -100V. Max drain current: 0.7A. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -100V. Channel type: P. Ciss Gate Capacitance [pF]: 200pF. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: -0.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ -0.42A. Gate breakdown voltage Ugs [V]: -4V. Manufacturer's marking: IRFD9110PBF. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 1.3W. Number of terminals: 4. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Switch-off delay tf[nsec.]: 15 ns. Switch-on time ton [nsec.]: 10 ns. Type of transistor: MOSFET power transistor. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/02/2025, 17:57

Technical documentation (PDF)
IRFD9110PBF
21 parameters
Housing
HEXDIP
Drain-source voltage (Vds)
-100V
Max drain current
0.7A
Drain-source voltage Uds [V]
-100V
Channel type
P
Ciss Gate Capacitance [pF]
200pF
Component family
MOSFET, P-MOS
Configuration
PCB through-hole mounting
Drain current Id (A) @ 25°C
-0.7A
Drain current through resistor Rds [Ohm] @ Ids [A]
1.2 Ohms @ -0.42A
Gate breakdown voltage Ugs [V]
-4V
Manufacturer's marking
IRFD9110PBF
Max temperature
+175°C.
Maximum dissipation Ptot [W]
1.3W
Number of terminals
4
On-resistance Rds On
1.2 Ohms
RoHS
yes
Switch-off delay tf[nsec.]
15 ns
Switch-on time ton [nsec.]
10 ns
Type of transistor
MOSFET power transistor
Original product from manufacturer
International Rectifier