P-channel transistor IRFD9024PBF, DIP4, -60V. Housing: DIP4. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -60V. Ciss Gate Capacitance [pF]: 570pF. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: -1.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.28 Ohms @ -0.96A. Drive Voltage: 10V. Features: -. Gate breakdown voltage Ugs [V]: -4V. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 1.6A. Information: -. MSL: -. Manufacturer's marking: IRFD9024PBF. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 1.3W. Mounting Type: THT. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. Polarity: MOSFET P. RoHS: yes. Series: -. Switch-off delay tf[nsec.]: 15 ns. Switch-on time ton [nsec.]: 13 ns. Vdss (Drain to Source Voltage): -60V. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/02/2025, 23:16