P-channel transistor IRFD9014, 1.1A, 500uA, DIP, DH-1 house, DIP-4, 60V. ID (T=25°C): 1.1A. Idss (max): 500uA. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 60V. Assembly/installation: PCB through-hole mounting. C(in): 270pF. Channel type: P. Conditioning unit: 100dB. Conditioning: plastic tube. Cost): 170pF. Drain-source protection: zener diode. Function: P-channel MOSFET transistor. G-S Protection: no. Gate/source voltage Vgs: 20V. ID (T=100°C): 0.8A. IDss (min): 100uA. Id(imp): 8.8A. Number of terminals: 4. On-resistance Rds On: 0.50 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 1.3W. Quantity per case: 1. RoHS: yes. Td(off): 10 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 80 ns. Type of transistor: FET. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:37