P-channel transistor IRF9Z34NSPBF, D²-PAK, TO-263, -55V
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Unit price
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1.40$
| Quantity in stock: 231 |
P-channel transistor IRF9Z34NSPBF, D²-PAK, TO-263, -55V. Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: -55V. Ciss Gate Capacitance [pF]: 620pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -19A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ -10A. Gate breakdown voltage Ugs [V]: -4V. Manufacturer's marking: F9Z34NS. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 68W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 30 ns. Switch-on time ton [nsec.]: 13 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/02/2025, 23:36
IRF9Z34NSPBF
17 parameters
Housing
D²-PAK
Housing (JEDEC standard)
TO-263
Drain-source voltage Uds [V]
-55V
Ciss Gate Capacitance [pF]
620pF
Component family
MOSFET, P-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
-19A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.1 Ohms @ -10A
Gate breakdown voltage Ugs [V]
-4V
Manufacturer's marking
F9Z34NS
Max temperature
+175°C.
Maximum dissipation Ptot [W]
68W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
30 ns
Switch-on time ton [nsec.]
13 ns
Original product from manufacturer
International Rectifier