P-channel transistor IRF9Z34NS, D2PAK ( TO-263 ), 19A, 250uA, D2PAK ( TO-263 ), 55V. Housing: D2PAK ( TO-263 ). ID (T=25°C): 19A. Idss (max): 250uA. Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. Assembly/installation: surface-mounted component (SMD). C(in): 620pF. Channel type: P. Charge: 23.3nC. Cost): 280pF. Drain current: -19A. Drain-source protection: yes. Drain-source voltage: -55V. Function: P-channel MOSFET transistor. G-S Protection: no. Gate-source voltage: 20V, ±20V. Gate/source voltage Vgs: 20V. Housing thermal resistance: 2.2K/W. ID (T=100°C): 14A. IDss (min): 25uA. Id(imp): 68A. Number of terminals: 3. On-resistance Rds On: 0.10 Ohms. On-state resistance: 100M Ohms. Pd (Power Dissipation, Max): 68W. Polarity: unipolar. Power: 68W. Quantity per case: 1. RoHS: yes. Td(off): 30 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 54ms. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:50