P-channel transistor IRF9Z34NPBF, TO-220AB, -55V, 17A, -55V

P-channel transistor IRF9Z34NPBF, TO-220AB, -55V, 17A, -55V

Quantity
Unit price
1-9
1.46$
10+
1.21$
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Quantity in stock: 176

P-channel transistor IRF9Z34NPBF, TO-220AB, -55V, 17A, -55V. Housing: TO-220AB. Drain-source voltage (Vds): -55V. Max drain current: 17A. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -55V. Channel type: P. Ciss Gate Capacitance [pF]: 620pF. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: -19A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ -10A. Gate breakdown voltage Ugs [V]: -4V. Manufacturer's marking: IRF9Z34NPBF. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 68W. Number of terminals: 3. On-resistance Rds On: 0.10 Ohms. Power: 56W. RoHS: yes. Switch-off delay tf[nsec.]: 30 ns. Switch-on time ton [nsec.]: 13 ns. Type of transistor: MOSFET power transistor. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/02/2025, 23:16

Technical documentation (PDF)
IRF9Z34NPBF
22 parameters
Housing
TO-220AB
Drain-source voltage (Vds)
-55V
Max drain current
17A
Drain-source voltage Uds [V]
-55V
Channel type
P
Ciss Gate Capacitance [pF]
620pF
Component family
MOSFET, P-MOS
Configuration
PCB through-hole mounting
Drain current Id (A) @ 25°C
-19A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.1 Ohms @ -10A
Gate breakdown voltage Ugs [V]
-4V
Manufacturer's marking
IRF9Z34NPBF
Max temperature
+175°C.
Maximum dissipation Ptot [W]
68W
Number of terminals
3
On-resistance Rds On
0.10 Ohms
Power
56W
RoHS
yes
Switch-off delay tf[nsec.]
30 ns
Switch-on time ton [nsec.]
13 ns
Type of transistor
MOSFET power transistor
Original product from manufacturer
International Rectifier