P-channel transistor IRF9Z24NPBF, 12A, 250uA, TO-220, TO-220AB, 55V. ID (T=25°C): 12A. Idss (max): 250uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. Assembly/installation: PCB through-hole mounting. C(in): 350pF. Channel type: P. Cost): 170pF. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. ID (T=100°C): 8.5A. IDss (min): 25uA. Id(imp): 48A. Number of terminals: 3. On-resistance Rds On: 0.175 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 45W. Quantity per case: 1. RoHS: yes. Td(off): 23 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 47 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 09:50