P-channel transistor IRF9640PBF, TO220AB, -200V, 11A, -200V
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P-channel transistor IRF9640PBF, TO220AB, -200V, 11A, -200V. Housing: TO220AB. Drain-source voltage (Vds): -200V. Max drain current: 11A. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -200V. Channel type: P. Ciss Gate Capacitance [pF]: 1200pF. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: -11A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.5 Ohms @ -6.6A. Drive Voltage: 10V. Features: -. Gate breakdown voltage Ugs [V]: -4V. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 11A. Information: -. MSL: -. Manufacturer's marking: IRF9640PBF. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 125W. Mounting Type: THT. Number of terminals: 3. On-resistance Rds On: 0.5 Ohms. Pd (Power Dissipation, Max): 125W. Polarity: MOSFET P. Power: 125W. RoHS: yes. Series: -. Switch-off delay tf[nsec.]: 39 ns. Switch-on time ton [nsec.]: 14 ns. Type of transistor: MOSFET power transistor. Vdss (Drain to Source Voltage): -200V. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/02/2025, 21:47