P-channel transistor IRF9640, TO-220, 11A, 500uA, TO-220AB, 200V

P-channel transistor IRF9640, TO-220, 11A, 500uA, TO-220AB, 200V

Quantity
Unit price
1-4
1.54$
5-24
1.27$
25-49
1.18$
50-99
1.04$
100+
0.86$
+25 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 108

P-channel transistor IRF9640, TO-220, 11A, 500uA, TO-220AB, 200V. Housing: TO-220. ID (T=25°C): 11A. Idss (max): 500uA. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 1200pF. Channel type: P. Charge: 44nC. Conditioning: tubus. Cost): 370pF. Drain current: -11A, -6.8A. Drain-source protection: yes. Drain-source voltage: -200V. Function: High-speed switching. G-S Protection: no. Gate-source voltage: ±20V. Gate/source voltage Vgs: 20V. ID (T=100°C): 6.6A. IDss (min): 100uA. Id(imp): 44A. On-resistance Rds On: 0.3 Ohms. On-state resistance: 0.5 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 125W. Polarity: unipolar. Power: 125W. Quantity per case: 1. RoHS: yes. Td(off): 39 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:50

Technical documentation (PDF)
IRF9640
37 parameters
Housing
TO-220
ID (T=25°C)
11A
Idss (max)
500uA
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
200V
Assembly/installation
PCB through-hole mounting
C(in)
1200pF
Channel type
P
Charge
44nC
Conditioning
tubus
Cost)
370pF
Drain current
-11A, -6.8A
Drain-source protection
yes
Drain-source voltage
-200V
Function
High-speed switching
G-S Protection
no
Gate-source voltage
±20V
Gate/source voltage Vgs
20V
ID (T=100°C)
6.6A
IDss (min)
100uA
Id(imp)
44A
On-resistance Rds On
0.3 Ohms
On-state resistance
0.5 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
125W
Polarity
unipolar
Power
125W
Quantity per case
1
RoHS
yes
Td(off)
39 ns
Td(on)
14 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
250 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier