P-channel transistor IRF9630, TO-220, 6.5A, 500uA, TO-220AB, 200V

P-channel transistor IRF9630, TO-220, 6.5A, 500uA, TO-220AB, 200V

Quantity
Unit price
1-4
1.31$
5-24
1.11$
25-49
0.98$
50-99
0.89$
100+
0.76$
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Equivalence available
Quantity in stock: 157

P-channel transistor IRF9630, TO-220, 6.5A, 500uA, TO-220AB, 200V. Housing: TO-220. ID (T=25°C): 6.5A. Idss (max): 500uA. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 700pF. Channel type: P. Charge: 29nC. Conditioning unit: 50. Conditioning: tubus. Cost): 200pF. Drain current: -6.5A, -4A. Drain-source protection: yes. Drain-source voltage: -200V. Function: High-speed switching. G-S Protection: no. Gate-source voltage: ±20V. Gate/source voltage Vgs: 20V. ID (T=100°C): 4A. IDss (min): 100uA. Id(imp): 26A. Number of terminals: 3. On-resistance Rds On: 0.8 Ohms. On-state resistance: 0.8 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 74W. Polarity: unipolar. Power: 74W. Quantity per case: 1. RoHS: yes. Td(off): 28 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 200 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:50

Technical documentation (PDF)
IRF9630
38 parameters
Housing
TO-220
ID (T=25°C)
6.5A
Idss (max)
500uA
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
200V
Assembly/installation
PCB through-hole mounting
C(in)
700pF
Channel type
P
Charge
29nC
Conditioning unit
50
Conditioning
tubus
Cost)
200pF
Drain current
-6.5A, -4A
Drain-source protection
yes
Drain-source voltage
-200V
Function
High-speed switching
G-S Protection
no
Gate-source voltage
±20V
Gate/source voltage Vgs
20V
ID (T=100°C)
4A
IDss (min)
100uA
Id(imp)
26A
Number of terminals
3
On-resistance Rds On
0.8 Ohms
On-state resistance
0.8 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
74W
Polarity
unipolar
Power
74W
Quantity per case
1
RoHS
yes
Td(off)
28 ns
Td(on)
12 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
200 ns
Type of transistor
MOSFET
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier

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