P-channel transistor IRF9610PBF, TO-220AB, -200V, 1.8A, -200V

P-channel transistor IRF9610PBF, TO-220AB, -200V, 1.8A, -200V

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Unit price
1-9
1.24$
10+
1.03$
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Quantity in stock: 236

P-channel transistor IRF9610PBF, TO-220AB, -200V, 1.8A, -200V. Housing: TO-220AB. Drain-source voltage (Vds): -200V. Max drain current: 1.8A. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -200V. Channel type: P. Ciss Gate Capacitance [pF]: 170pF. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: -1.8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 3 Ohms @ -0.9A. Gate breakdown voltage Ugs [V]: -4V. Manufacturer's marking: IRF9610PBF. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 20W. Number of terminals: 3. On-resistance Rds On: 3 Ohms. Power: 20W. RoHS: yes. Switch-off delay tf[nsec.]: 10 ns. Switch-on time ton [nsec.]: 8 ns. Type of transistor: MOSFET power transistor. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/02/2025, 23:16

Technical documentation (PDF)
IRF9610PBF
22 parameters
Housing
TO-220AB
Drain-source voltage (Vds)
-200V
Max drain current
1.8A
Drain-source voltage Uds [V]
-200V
Channel type
P
Ciss Gate Capacitance [pF]
170pF
Component family
MOSFET, P-MOS
Configuration
PCB through-hole mounting
Drain current Id (A) @ 25°C
-1.8A
Drain current through resistor Rds [Ohm] @ Ids [A]
3 Ohms @ -0.9A
Gate breakdown voltage Ugs [V]
-4V
Manufacturer's marking
IRF9610PBF
Max temperature
+150°C.
Maximum dissipation Ptot [W]
20W
Number of terminals
3
On-resistance Rds On
3 Ohms
Power
20W
RoHS
yes
Switch-off delay tf[nsec.]
10 ns
Switch-on time ton [nsec.]
8 ns
Type of transistor
MOSFET power transistor
Original product from manufacturer
Vishay (ir)