P-channel transistor IRF9610, TO-220, 1.8A, 500uA, TO-220AB, 200V

P-channel transistor IRF9610, TO-220, 1.8A, 500uA, TO-220AB, 200V

Quantity
Unit price
1-4
1.04$
5-24
0.88$
25-49
0.77$
50-99
0.69$
100+
0.58$
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Quantity in stock: 181

P-channel transistor IRF9610, TO-220, 1.8A, 500uA, TO-220AB, 200V. Housing: TO-220. ID (T=25°C): 1.8A. Idss (max): 500uA. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 170pF. Channel type: P. Charge: 11nC. Conditioning: tubus. Cost): 50pF. Drain current: -1A, -1.75A. Drain-source protection: zener diode. Drain-source voltage: -200V. Function: High-speed switching. G-S Protection: no. Gate-source voltage: ±20V. Gate/source voltage Vgs: 20V. ID (T=100°C): 1A. IDss (min): 100uA. Id(imp): 7A. Manufacturer's marking: IRF9610PBF. Number of terminals: 3. On-resistance Rds On: 3 Ohms. On-state resistance: 3 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 20W. Polarity: unipolar. Power: 20W. Quantity per case: 1. RoHS: yes. Td(off): 10 ns. Td(on): 8 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Vishay. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
IRF9610
39 parameters
Housing
TO-220
ID (T=25°C)
1.8A
Idss (max)
500uA
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
200V
Assembly/installation
PCB through-hole mounting
C(in)
170pF
Channel type
P
Charge
11nC
Conditioning
tubus
Cost)
50pF
Drain current
-1A, -1.75A
Drain-source protection
zener diode
Drain-source voltage
-200V
Function
High-speed switching
G-S Protection
no
Gate-source voltage
±20V
Gate/source voltage Vgs
20V
ID (T=100°C)
1A
IDss (min)
100uA
Id(imp)
7A
Manufacturer's marking
IRF9610PBF
Number of terminals
3
On-resistance Rds On
3 Ohms
On-state resistance
3 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
20W
Polarity
unipolar
Power
20W
Quantity per case
1
RoHS
yes
Td(off)
10 ns
Td(on)
8 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
240 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Vishay