P-channel transistor IRF9540N, TO-220, 23A, 250uA, TO-220AB, 100V

P-channel transistor IRF9540N, TO-220, 23A, 250uA, TO-220AB, 100V

Quantity
Unit price
1-4
1.55$
5-24
1.34$
25-49
1.17$
50-99
1.03$
100+
0.87$
+25 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 184

P-channel transistor IRF9540N, TO-220, 23A, 250uA, TO-220AB, 100V. Housing: TO-220. ID (T=25°C): 23A. Idss (max): 250uA. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 1300pF. Channel type: P. Charge: 64.7nC. Conditioning: tubus. Cost): 400pF. Drain current: -23A. Drain-source protection: yes. Drain-source voltage: -100V. Function: High-speed switching. G-S Protection: no. Gate-source voltage: 20V, ±20V. Gate/source voltage Vgs: 20V. Housing thermal resistance: 1.1K/W. ID (T=100°C): 16A. IDss (min): 25uA. Id(imp): 76A. Number of terminals: 3. On-resistance Rds On: 0.117 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 140W. Polarity: unipolar. Power: 140W. Quantity per case: 1. RoHS: yes. Td(off): 51 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
IRF9540N
38 parameters
Housing
TO-220
ID (T=25°C)
23A
Idss (max)
250uA
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
100V
Assembly/installation
PCB through-hole mounting
C(in)
1300pF
Channel type
P
Charge
64.7nC
Conditioning
tubus
Cost)
400pF
Drain current
-23A
Drain-source protection
yes
Drain-source voltage
-100V
Function
High-speed switching
G-S Protection
no
Gate-source voltage
20V, ±20V
Gate/source voltage Vgs
20V
Housing thermal resistance
1.1K/W
ID (T=100°C)
16A
IDss (min)
25uA
Id(imp)
76A
Number of terminals
3
On-resistance Rds On
0.117 Ohms
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
140W
Polarity
unipolar
Power
140W
Quantity per case
1
RoHS
yes
Td(off)
51 ns
Td(on)
15 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
150 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier