P-channel transistor IRF9530NPBF, TO220AB, -100V, 14A, -100V
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P-channel transistor IRF9530NPBF, TO220AB, -100V, 14A, -100V. Housing: TO220AB. Drain-source voltage (Vds): -100V. Max drain current: 14A. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -100V. Channel type: P. Ciss Gate Capacitance [pF]: 760pF. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: -14A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ -8.4A. Drive Voltage: 10V. Features: -. Gate breakdown voltage Ugs [V]: -4V. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 14A. Information: -. MSL: -. Manufacturer's marking: IRF9530. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 79W. Mounting Type: THT. Number of terminals: 3. On-resistance Rds On: 0.4 Ohms. Pd (Power Dissipation, Max): 79W. Polarity: MOSFET P. Power: 75W. RoHS: yes. Series: -. Switch-off delay tf[nsec.]: 45 ns. Switch-on time ton [nsec.]: 15 ns. Type of transistor: MOSFET power transistor. Vdss (Drain to Source Voltage): -100V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/02/2025, 17:57