P-channel transistor IRF9520PBF, TO-220AB, -100V. Housing: TO-220AB. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -100V. Assembly/installation: THT. Charge: 18nC. Ciss Gate Capacitance [pF]: 390pF. Component family: MOSFET, P-MOS. Conditioning: tubus. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: -6.8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.48 Ohms @ -4A. Drain current: -4.8A. Drain-source voltage: -100V. Drive Voltage: 10V. Features: -. Gate breakdown voltage Ugs [V]: -4V. Gate-source voltage: ±20V. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 6A. Information: -. MSL: -. Manufacturer's marking: IRF9520PBF. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 48W. Mounting Type: THT. Number of terminals: 3. On-state resistance: 0.6 Ohms. Pd (Power Dissipation, Max): 40W. Polarity: unipolar. Power: 60W. RoHS: yes. Series: -. Switch-off delay tf[nsec.]: 21 ns. Switch-on time ton [nsec.]: 9.6 ns. Type of transistor: P-MOSFET. Vdss (Drain to Source Voltage): -100V. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/02/2025, 19:02